Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation
In this article, field-effect surface passivation is characterised as either intrinsic or extrinsic, depending on the origin of the charges present in passivation dielectric layers. The surface recombination velocity of float zone, 1 Ω cm, n-type silicon was reduced to 0.15cm/s, the lowest ever obse...
| Main Authors: | , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
AIP Publishing
2014
|