'Semi-insulating' silicon using deep level impurity doping: problems and potential
The possibility of using deep level impurities to obtain 'semi-insulating' Czochralski silicon of near-intrinsic resistivity for microwave applications has been analysed. It is shown that co-doping with a deep donor and deep acceptor is effective in producing high resistivity p-type silico...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2003
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