ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON

Podobne zapisy

• ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
  od: Wilkinson, A, i wsp.
  Wydane: (1993)
• ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
  od: Czernuszka, J, i wsp.
  Wydane: (1991)
• ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
  od: Czernuszka, J, i wsp.
  Wydane: (1991)
• Effects of surface relaxation on electron channelling contrast images of misfit dislocations
  od: Wilkinson, A, i wsp.
  Wydane: (1994)
• Understanding defects in germanium and silicon for optoelectronic energy conversion
  od: Patel, Neil Sunil
  Wydane: (2016)