ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES
This paper presents results on the atomic scale chemistry at the Co-Si(100) and Ni-Si(100) interfaces, obtained using atom probe techniques. Room temperature deposition of Co on Si(100) oriented specimens is found to form a reacted layer of composition CoSi2. A layer of this composition appears to p...
| Main Authors: | , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
Publ by IOP Publishing Ltd
1991
|
| Summary: | This paper presents results on the atomic scale chemistry at the Co-Si(100) and Ni-Si(100) interfaces, obtained using atom probe techniques. Room temperature deposition of Co on Si(100) oriented specimens is found to form a reacted layer of composition CoSi2. A layer of this composition appears to persist at the interface during annealing at 250°C as the metal reacts to form the CoSi silicide. The position-sensitive atom probe has been applied to the analysis of metal-semiconductor interfaces for the first time, showing the potential of this technique for mapping the variation in chemistry over an area of the interface. |
|---|