ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES
This paper presents results on the atomic scale chemistry at the Co-Si(100) and Ni-Si(100) interfaces, obtained using atom probe techniques. Room temperature deposition of Co on Si(100) oriented specimens is found to form a reacted layer of composition CoSi2. A layer of this composition appears to p...
| Những tác giả chính: | , , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
Publ by IOP Publishing Ltd
1991
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| _version_ | 1826258706232246272 |
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| author | Cerezo, A Grovenor, C Ozsanlav, R |
| author_facet | Cerezo, A Grovenor, C Ozsanlav, R |
| author_sort | Cerezo, A |
| collection | OXFORD |
| description | This paper presents results on the atomic scale chemistry at the Co-Si(100) and Ni-Si(100) interfaces, obtained using atom probe techniques. Room temperature deposition of Co on Si(100) oriented specimens is found to form a reacted layer of composition CoSi2. A layer of this composition appears to persist at the interface during annealing at 250°C as the metal reacts to form the CoSi silicide. The position-sensitive atom probe has been applied to the analysis of metal-semiconductor interfaces for the first time, showing the potential of this technique for mapping the variation in chemistry over an area of the interface. |
| first_indexed | 2024-03-06T18:38:12Z |
| format | Journal article |
| id | oxford-uuid:0c0223eb-2a28-48af-b0af-2f5f0aaa1445 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T18:38:12Z |
| publishDate | 1991 |
| publisher | Publ by IOP Publishing Ltd |
| record_format | dspace |
| spelling | oxford-uuid:0c0223eb-2a28-48af-b0af-2f5f0aaa14452022-03-26T09:32:29ZATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACESJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:0c0223eb-2a28-48af-b0af-2f5f0aaa1445EnglishSymplectic Elements at OxfordPubl by IOP Publishing Ltd1991Cerezo, AGrovenor, COzsanlav, RThis paper presents results on the atomic scale chemistry at the Co-Si(100) and Ni-Si(100) interfaces, obtained using atom probe techniques. Room temperature deposition of Co on Si(100) oriented specimens is found to form a reacted layer of composition CoSi2. A layer of this composition appears to persist at the interface during annealing at 250°C as the metal reacts to form the CoSi silicide. The position-sensitive atom probe has been applied to the analysis of metal-semiconductor interfaces for the first time, showing the potential of this technique for mapping the variation in chemistry over an area of the interface. |
| spellingShingle | Cerezo, A Grovenor, C Ozsanlav, R ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES |
| title | ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES |
| title_full | ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES |
| title_fullStr | ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES |
| title_full_unstemmed | ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES |
| title_short | ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES |
| title_sort | atomic scale chemistry of co and ni si 100 interfaces |
| work_keys_str_mv | AT cerezoa atomicscalechemistryofcoandnisi100interfaces AT grovenorc atomicscalechemistryofcoandnisi100interfaces AT ozsanlavr atomicscalechemistryofcoandnisi100interfaces |