ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES

This paper presents results on the atomic scale chemistry at the Co-Si(100) and Ni-Si(100) interfaces, obtained using atom probe techniques. Room temperature deposition of Co on Si(100) oriented specimens is found to form a reacted layer of composition CoSi2. A layer of this composition appears to p...

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Hlavní autoři: Cerezo, A, Grovenor, C, Ozsanlav, R
Médium: Journal article
Jazyk:English
Vydáno: Publ by IOP Publishing Ltd 1991

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