ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES
This paper presents results on the atomic scale chemistry at the Co-Si(100) and Ni-Si(100) interfaces, obtained using atom probe techniques. Room temperature deposition of Co on Si(100) oriented specimens is found to form a reacted layer of composition CoSi2. A layer of this composition appears to p...
Hlavní autoři: | Cerezo, A, Grovenor, C, Ozsanlav, R |
---|---|
Médium: | Journal article |
Jazyk: | English |
Vydáno: |
Publ by IOP Publishing Ltd
1991
|
Podobné jednotky
-
ATOMIC SCALE CHEMISTRY OF CO- AND NI-SI(100) INTERFACES
Autor: Cerezo, A, a další
Vydáno: (1991) -
Atomic-scale modelling of the Si(100)-SiO(2) interface
Autor: Giustino, F, a další
Vydáno: (2005) -
Atomic-scale analysis of CoFe/Cu and CoFe/NiFe interfaces
Autor: Larson, D, a další
Vydáno: (2000) -
The atomic scale structure and chemistry of the zircaloy-4 metal-oxide interface
Autor: Hudson, D, a další
Vydáno: (2009) -
ATOM PROBE STUDIES OF THE COMPOSITION OF LOW-TEMPERATURE OXIDES ON (100) SILICON AND GALLIUM-ARSENIDE SURFACES
Autor: Grovenor, C, a další
Vydáno: (1989)