Simulation of heavily irradiated silicon pixel detectors

Simulation of heavily irradiated silicon pixel detectors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a...

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Bibliographic Details
Main Authors: Swartz, M, Chiochia, V, Allkofer, Y, Amsler, C, Bortoletto, D, Cremaldi, L, Cucciarelli, S, Dorokhov, A, Hoermann, C, Kim, D, Konecki, M, Kotlinski, D, Prokofiev, K, Regenfus, C, Rohe, T, Sanders, DA, Son, S, Speer, T
Format: Journal article
Language:English
Published: SLAC National Accelerator Laboratory 2006

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