| Summary: | Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we
present the study of a frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and
its influence on magnetization dynamics using a time-resolved magneto-optical Kerr effect technique. In
our device, operating at gigahertz frequencies, we find a large displacement current of the order of mA,
which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and
spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ
devices operating under high current conditions, also highlighting the significance of capacitive impedance
in high-frequency magnetotransport techniques.
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