INVESTIGATION OF THE GROWTH OF GALLIUM-ARSENIDE THIN-FILMS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING GALLANE-QUINUCLIDINE ADDUCT
The use of gallane-quinuclidine adduct (GaH3[N(CH 2CH2)3CH]) as a chemical precursor in metal organic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) has been investigated. The compound displays a long-term stability and can be readily admitted as a molecular beam into the growth cham...
| Príomhchruthaitheoirí: | , , , , |
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| Formáid: | Journal article |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
1993
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