Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy
We present the catalyst-free growth of binary Bi2Te3 topological insulator nanostructures on c-plane sapphire substrates by molecular beam epitaxy. Dense arrays of single-crystalline nanostructures, growing along the [110] direction, are obtained for substrate temperatures ranging from ∼180°C to 260...
| Príomhchruthaitheoirí: | , , , , |
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| Formáid: | Journal article |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
American Institute of Physics Inc.
2014
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| _version_ | 1826259027230720000 |
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| author | Harrison, SE Schoenherr, P Huo, Y Harris, J Hesjedal, T |
| author_facet | Harrison, SE Schoenherr, P Huo, Y Harris, J Hesjedal, T |
| author_sort | Harrison, SE |
| collection | OXFORD |
| description | We present the catalyst-free growth of binary Bi2Te3 topological insulator nanostructures on c-plane sapphire substrates by molecular beam epitaxy. Dense arrays of single-crystalline nanostructures, growing along the [110] direction, are obtained for substrate temperatures ranging from ∼180°C to 260°C. The growth rate and shape of the nanostructures are highly temperature-dependent. The microscopic study of the nanostructures and their relationship to the underlying Bi2Te3 thin film gives an insight into the growth mechanism. |
| first_indexed | 2024-03-06T18:43:23Z |
| format | Journal article |
| id | oxford-uuid:0daa70ea-7f3a-4448-b45a-9cfb4348fc80 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T18:43:23Z |
| publishDate | 2014 |
| publisher | American Institute of Physics Inc. |
| record_format | dspace |
| spelling | oxford-uuid:0daa70ea-7f3a-4448-b45a-9cfb4348fc802022-03-26T09:41:46ZCatalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxyJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:0daa70ea-7f3a-4448-b45a-9cfb4348fc80EnglishSymplectic Elements at OxfordAmerican Institute of Physics Inc.2014Harrison, SESchoenherr, PHuo, YHarris, JHesjedal, TWe present the catalyst-free growth of binary Bi2Te3 topological insulator nanostructures on c-plane sapphire substrates by molecular beam epitaxy. Dense arrays of single-crystalline nanostructures, growing along the [110] direction, are obtained for substrate temperatures ranging from ∼180°C to 260°C. The growth rate and shape of the nanostructures are highly temperature-dependent. The microscopic study of the nanostructures and their relationship to the underlying Bi2Te3 thin film gives an insight into the growth mechanism. |
| spellingShingle | Harrison, SE Schoenherr, P Huo, Y Harris, J Hesjedal, T Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy |
| title | Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy |
| title_full | Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy |
| title_fullStr | Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy |
| title_full_unstemmed | Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy |
| title_short | Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy |
| title_sort | catalyst free growth of bi2te3 nanostructures by molecular beam epitaxy |
| work_keys_str_mv | AT harrisonse catalystfreegrowthofbi2te3nanostructuresbymolecularbeamepitaxy AT schoenherrp catalystfreegrowthofbi2te3nanostructuresbymolecularbeamepitaxy AT huoy catalystfreegrowthofbi2te3nanostructuresbymolecularbeamepitaxy AT harrisj catalystfreegrowthofbi2te3nanostructuresbymolecularbeamepitaxy AT hesjedalt catalystfreegrowthofbi2te3nanostructuresbymolecularbeamepitaxy |