BACKSCATTERED ELECTRON CONTRAST ON CROSS-SECTIONS OF INTERFACES AND MULTILAYERS IN THE SCANNING ELECTRON-MICROSCOPE

BACKSCATTERED ELECTRON CONTRAST ON CROSS-SECTIONS OF INTERFACES AND MULTILAYERS IN THE SCANNING ELECTRON-MICROSCOPE

Backscattered electron (BSE) profiles from single interfaces in bulk cross-section semiconductor specimens are distorted by a 'dip' and 'bump' effect. A deconvolution/convolution method was recently developed [Konkol et al., Ultramicroscopy 55 (1994) 183] to eliminate these disto...

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Bibliographic Details
Main Authors:	Konkol, A, Booker, G, Wilshaw, P
Format:	Journal article
Language:	English
Published:	Elsevier 1995

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