BACKSCATTERED ELECTRON CONTRAST ON CROSS-SECTIONS OF INTERFACES AND MULTILAYERS IN THE SCANNING ELECTRON-MICROSCOPE
Backscattered electron (BSE) profiles from single interfaces in bulk cross-section semiconductor specimens are distorted by a 'dip' and 'bump' effect. A deconvolution/convolution method was recently developed [Konkol et al., Ultramicroscopy 55 (1994) 183] to eliminate these disto...
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| Natura: | Journal article |
| Lingua: | English |
| Pubblicazione: |
Elsevier
1995
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