Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
GaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire mor...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2011
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| _version_ | 1826259269086871552 |
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| author | Joyce, H Gao, Q Wong-Leung, J Kim, Y Tan, H Jagadish, C |
| author_facet | Joyce, H Gao, Q Wong-Leung, J Kim, Y Tan, H Jagadish, C |
| author_sort | Joyce, H |
| collection | OXFORD |
| description | GaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire morphology, orientation, crystal structure, and chemical composition. Although GaAs and InAs are related material systems, GaAs and InAs nanowires exhibit very different growth behaviors. An understanding of these growth behaviors is imperative if high-quality ternary InGaAs nanowires are to be realized. This report examines GaAs, InAs, and InGaAs nanowires, and how their growth may be tailored to achieve desirable material properties. GaAs and InAs nanowire growth are compared, with a view toward the growth of high-quality InGaAs nanowires with device-accessible properties. © 2011 IEEE. |
| first_indexed | 2024-03-06T18:47:12Z |
| format | Journal article |
| id | oxford-uuid:0eeb87a3-a2b7-40e8-b0fa-841379b78a7a |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T18:47:12Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | oxford-uuid:0eeb87a3-a2b7-40e8-b0fa-841379b78a7a2022-03-26T09:48:34ZTailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applicationsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:0eeb87a3-a2b7-40e8-b0fa-841379b78a7aEnglishSymplectic Elements at Oxford2011Joyce, HGao, QWong-Leung, JKim, YTan, HJagadish, CGaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire morphology, orientation, crystal structure, and chemical composition. Although GaAs and InAs are related material systems, GaAs and InAs nanowires exhibit very different growth behaviors. An understanding of these growth behaviors is imperative if high-quality ternary InGaAs nanowires are to be realized. This report examines GaAs, InAs, and InGaAs nanowires, and how their growth may be tailored to achieve desirable material properties. GaAs and InAs nanowire growth are compared, with a view toward the growth of high-quality InGaAs nanowires with device-accessible properties. © 2011 IEEE. |
| spellingShingle | Joyce, H Gao, Q Wong-Leung, J Kim, Y Tan, H Jagadish, C Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications |
| title | Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications |
| title_full | Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications |
| title_fullStr | Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications |
| title_full_unstemmed | Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications |
| title_short | Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications |
| title_sort | tailoring gaas inas and ingaas nanowires for optoelectronic device applications |
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