Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
GaAs, InAs, and InGaAs nanowires each exhibit significant potential to drive new applications in electronic and optoelectronic devices. Nevertheless, the development of these devices depends on our ability to fabricate these nanowires with tight control over critical properties, such as nanowire mor...
Main Authors: | Joyce, H, Gao, Q, Wong-Leung, J, Kim, Y, Tan, H, Jagadish, C |
---|---|
Format: | Journal article |
Language: | English |
Published: |
2011
|
Similar Items
-
Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
by: Joyce, H, et al.
Published: (2011) -
Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
by: Paladugu, M, et al.
Published: (2008) -
Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures
by: Joyce, H, et al.
Published: (2007) -
Growth of straight InAs-on-GaAs nanowire heterostructures
by: Messing, M, et al.
Published: (2011) -
Understanding the kink formation in GaAs/InAs heterostructural nanowires
by: Paladugu, M, et al.
Published: (2006)