Valley-addressable polaritons in atomically thin semiconductors

Valley-addressable polaritons in atomically thin semiconductors

The locking of the electron spin to the valley degree of freedom in transition metal dichalcogenide (TMD) monolayers has seen these materials emerge as a promising platform in valleytronics1, 2. When embedded in optical microcavities, the large oscillator strengths of excitonic transitions in TMDs a...

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Bibliographic Details
Main Authors:	Dufferwiel, S, Lyons, TP, Solnyshkov, DD, Trichet, AAP, Withers, F, Schwarz, S, Malpuech, G, Smith, JM, Novoselov, KS, Skolnick, MS, Krizhanovskii, DN, Tartakovskii, AI
Format:	Journal article
Published:	Springer Nature 2017

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