On the c-Si/SiO2 interface recombination parameters from photo-conductance decay measurements
The recombination of electric charge carriers at semiconductor surfaces continues to be a limiting factor in achieving high performance optoelectronic devices, including solar cells, laser diodes and photodetectors. The theoretical model and a solution algorithm for surface recombination have been p...
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| Format: | Journal article |
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American Institute of Physics
2017
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