APA ציטוט

Snizhko, K., Cheianov, V., & Simon, S. (2012). Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene.

Chicago Style (17th ed.) Citation

Snizhko, K., V. Cheianov, and S. Simon. Importance of Interband Transitions for the Fractional Quantum Hall Effect in Bilayer Graphene. 2012.

ציטוט MLA

Snizhko, K., et al. Importance of Interband Transitions for the Fractional Quantum Hall Effect in Bilayer Graphene. 2012.

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