Snizhko, K., Cheianov, V., & Simon, S. (2012). Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene.
Citazione stile Chigago Style (17a edizione)Snizhko, K., V. Cheianov, e S. Simon. Importance of Interband Transitions for the Fractional Quantum Hall Effect in Bilayer Graphene. 2012.
Citatione MLA (9a ed.)Snizhko, K., et al. Importance of Interband Transitions for the Fractional Quantum Hall Effect in Bilayer Graphene. 2012.
Attenzione: Queste citazioni potrebbero non essere precise al 100%.