Snizhko, K., Cheianov, V., & Simon, S. (2012). Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene.
Chicago Style (17th ed.) CitationSnizhko, K., V. Cheianov, and S. Simon. Importance of Interband Transitions for the Fractional Quantum Hall Effect in Bilayer Graphene. 2012.
MLA citiranjeSnizhko, K., et al. Importance of Interband Transitions for the Fractional Quantum Hall Effect in Bilayer Graphene. 2012.
Opozorilo: Ti citati niso vedno 100% točni.