APA引文

Snizhko, K., Cheianov, V., & Simon, S. (2012). Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene.

Chicago Style (17th ed.) Citation

Snizhko, K., V. Cheianov, and S. Simon. Importance of Interband Transitions for the Fractional Quantum Hall Effect in Bilayer Graphene. 2012.

MLA引文

Snizhko, K., et al. Importance of Interband Transitions for the Fractional Quantum Hall Effect in Bilayer Graphene. 2012.

警告:這些引文格式不一定是100%准確.