Snizhko, K., Cheianov, V., & Simon, S. (2012). Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene.
Chicago Style (17th ed.) CitationSnizhko, K., V. Cheianov, and S. Simon. Importance of Interband Transitions for the Fractional Quantum Hall Effect in Bilayer Graphene. 2012.
MLA引文Snizhko, K., et al. Importance of Interband Transitions for the Fractional Quantum Hall Effect in Bilayer Graphene. 2012.
警告:這些引文格式不一定是100%准確.