Quantum dots and nanowires for optoelectronic device applications
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2....
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Conference item |
| Izdano: |
2006
|
| _version_ | 1826259647967789056 |
|---|---|
| author | Gao, Q Kim, Y Joyce, H Lever, P Mokkapati, S Buda, M Tan, H Jagadish, C |
| author_facet | Gao, Q Kim, Y Joyce, H Lever, P Mokkapati, S Buda, M Tan, H Jagadish, C |
| author_sort | Gao, Q |
| collection | OXFORD |
| description | InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper. ©2006 IEEE. |
| first_indexed | 2024-03-06T18:53:10Z |
| format | Conference item |
| id | oxford-uuid:10f058f3-433e-4be1-aa48-2d1d57b627e2 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T18:53:10Z |
| publishDate | 2006 |
| record_format | dspace |
| spelling | oxford-uuid:10f058f3-433e-4be1-aa48-2d1d57b627e22022-03-26T09:59:15ZQuantum dots and nanowires for optoelectronic device applicationsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:10f058f3-433e-4be1-aa48-2d1d57b627e2Symplectic Elements at Oxford2006Gao, QKim, YJoyce, HLever, PMokkapati, SBuda, MTan, HJagadish, CInGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper. ©2006 IEEE. |
| spellingShingle | Gao, Q Kim, Y Joyce, H Lever, P Mokkapati, S Buda, M Tan, H Jagadish, C Quantum dots and nanowires for optoelectronic device applications |
| title | Quantum dots and nanowires for optoelectronic device applications |
| title_full | Quantum dots and nanowires for optoelectronic device applications |
| title_fullStr | Quantum dots and nanowires for optoelectronic device applications |
| title_full_unstemmed | Quantum dots and nanowires for optoelectronic device applications |
| title_short | Quantum dots and nanowires for optoelectronic device applications |
| title_sort | quantum dots and nanowires for optoelectronic device applications |
| work_keys_str_mv | AT gaoq quantumdotsandnanowiresforoptoelectronicdeviceapplications AT kimy quantumdotsandnanowiresforoptoelectronicdeviceapplications AT joyceh quantumdotsandnanowiresforoptoelectronicdeviceapplications AT leverp quantumdotsandnanowiresforoptoelectronicdeviceapplications AT mokkapatis quantumdotsandnanowiresforoptoelectronicdeviceapplications AT budam quantumdotsandnanowiresforoptoelectronicdeviceapplications AT tanh quantumdotsandnanowiresforoptoelectronicdeviceapplications AT jagadishc quantumdotsandnanowiresforoptoelectronicdeviceapplications |