Quantum dots and nanowires for optoelectronic device applications
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2....
| Հիմնական հեղինակներ: | , , , , , , , |
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| Ձևաչափ: | Conference item |
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2006
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