Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide
We demonstrate that metal oxides exhibit the same relationship between lattice strain and electronic band gap as nonpolar semiconductors. Epitaxial growth of ultrathin [111]-oriented single-crystal indium-oxide films on a mismatched Y-stabilized zirconia substrate reveals a net band-gap decrease, wh...
| Հիմնական հեղինակներ: | , , , |
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| Ձևաչափ: | Journal article |
| Լեզու: | English |
| Հրապարակվել է: |
2011
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| _version_ | 1826260042399088640 |
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| author | Walsh, A Catlow, C Zhang, K Egdell, R |
| author_facet | Walsh, A Catlow, C Zhang, K Egdell, R |
| author_sort | Walsh, A |
| collection | OXFORD |
| description | We demonstrate that metal oxides exhibit the same relationship between lattice strain and electronic band gap as nonpolar semiconductors. Epitaxial growth of ultrathin [111]-oriented single-crystal indium-oxide films on a mismatched Y-stabilized zirconia substrate reveals a net band-gap decrease, which is dissipated as the film thickness is increased and the epitaxial strain is relieved. Calculation of the band-gap deformation of In2O 3, using a hybrid density functional, confirms that, while the uniaxial lattice contraction along [111] results in a band-gap increase due to a raise of the conduction band, the lattice expansion in the (111) plane caused by the substrate mismatch compensates, resulting in a net band-gap decrease. These results have direct implications for tuning the band gaps and transport properties of oxides for application in optoelectronic devices. © 2011 American Physical Society. |
| first_indexed | 2024-03-06T18:59:20Z |
| format | Journal article |
| id | oxford-uuid:12f90a23-7023-46fb-bf5c-83bab9123c97 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T18:59:20Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | oxford-uuid:12f90a23-7023-46fb-bf5c-83bab9123c972022-03-26T10:11:09ZControl of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxideJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:12f90a23-7023-46fb-bf5c-83bab9123c97EnglishSymplectic Elements at Oxford2011Walsh, ACatlow, CZhang, KEgdell, RWe demonstrate that metal oxides exhibit the same relationship between lattice strain and electronic band gap as nonpolar semiconductors. Epitaxial growth of ultrathin [111]-oriented single-crystal indium-oxide films on a mismatched Y-stabilized zirconia substrate reveals a net band-gap decrease, which is dissipated as the film thickness is increased and the epitaxial strain is relieved. Calculation of the band-gap deformation of In2O 3, using a hybrid density functional, confirms that, while the uniaxial lattice contraction along [111] results in a band-gap increase due to a raise of the conduction band, the lattice expansion in the (111) plane caused by the substrate mismatch compensates, resulting in a net band-gap decrease. These results have direct implications for tuning the band gaps and transport properties of oxides for application in optoelectronic devices. © 2011 American Physical Society. |
| spellingShingle | Walsh, A Catlow, C Zhang, K Egdell, R Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide |
| title | Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide |
| title_full | Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide |
| title_fullStr | Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide |
| title_full_unstemmed | Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide |
| title_short | Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide |
| title_sort | control of the band gap states of metal oxides by the application of epitaxial strain the case of indium oxide |
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