Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide

Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide

We demonstrate that metal oxides exhibit the same relationship between lattice strain and electronic band gap as nonpolar semiconductors. Epitaxial growth of ultrathin [111]-oriented single-crystal indium-oxide films on a mismatched Y-stabilized zirconia substrate reveals a net band-gap decrease, wh...

Полное описание

Библиографические подробности
Главные авторы:	Walsh, A, Catlow, C, Zhang, K, Egdell, R
Формат:	Journal article
Язык:	English
Опубликовано:	2011

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