Control of the band-gap states of metal oxides by the application of epitaxial strain: The case of indium oxide
We demonstrate that metal oxides exhibit the same relationship between lattice strain and electronic band gap as nonpolar semiconductors. Epitaxial growth of ultrathin [111]-oriented single-crystal indium-oxide films on a mismatched Y-stabilized zirconia substrate reveals a net band-gap decrease, wh...
| Autori principali: | , , , |
|---|---|
| Natura: | Journal article |
| Lingua: | English |
| Pubblicazione: |
2011
|