Carrier localization mechanisms in InGaN/GaN quantum wells
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can locali...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
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American Physical Society
2011
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| _version_ | 1797054640661987328 |
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| author | Watson-Parris, D Godfrey, M Dawson, P Oliver, R Galtrey, M Kappers, M Humphreys, C |
| author_facet | Watson-Parris, D Godfrey, M Dawson, P Oliver, R Galtrey, M Kappers, M Humphreys, C |
| author_sort | Watson-Parris, D |
| collection | OXFORD |
| description | Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can localize the carriers. By using a locally varying indium concentration function we have calculated the contribution to the potential energy of the carriers from band gap fluctuations, the deformation potential, and the spontaneous and piezoelectric fields. We have considered the effect of well width fluctuations and found that these contribute to electron localization, but not to hole localization. We also simulate low temperature photoluminescence spectra and find good agreement with experiment. |
| first_indexed | 2024-03-06T19:00:04Z |
| format | Journal article |
| id | oxford-uuid:13370e50-9e95-415e-8d1c-141463c6a822 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T19:00:04Z |
| publishDate | 2011 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | oxford-uuid:13370e50-9e95-415e-8d1c-141463c6a8222022-03-26T10:12:39ZCarrier localization mechanisms in InGaN/GaN quantum wellsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:13370e50-9e95-415e-8d1c-141463c6a822Symplectic Elements at OxfordAmerican Physical Society2011Watson-Parris, DGodfrey, MDawson, POliver, RGaltrey, MKappers, MHumphreys, CLocalization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can localize the carriers. By using a locally varying indium concentration function we have calculated the contribution to the potential energy of the carriers from band gap fluctuations, the deformation potential, and the spontaneous and piezoelectric fields. We have considered the effect of well width fluctuations and found that these contribute to electron localization, but not to hole localization. We also simulate low temperature photoluminescence spectra and find good agreement with experiment. |
| spellingShingle | Watson-Parris, D Godfrey, M Dawson, P Oliver, R Galtrey, M Kappers, M Humphreys, C Carrier localization mechanisms in InGaN/GaN quantum wells |
| title | Carrier localization mechanisms in InGaN/GaN quantum wells |
| title_full | Carrier localization mechanisms in InGaN/GaN quantum wells |
| title_fullStr | Carrier localization mechanisms in InGaN/GaN quantum wells |
| title_full_unstemmed | Carrier localization mechanisms in InGaN/GaN quantum wells |
| title_short | Carrier localization mechanisms in InGaN/GaN quantum wells |
| title_sort | carrier localization mechanisms in ingan gan quantum wells |
| work_keys_str_mv | AT watsonparrisd carrierlocalizationmechanismsininganganquantumwells AT godfreym carrierlocalizationmechanismsininganganquantumwells AT dawsonp carrierlocalizationmechanismsininganganquantumwells AT oliverr carrierlocalizationmechanismsininganganquantumwells AT galtreym carrierlocalizationmechanismsininganganquantumwells AT kappersm carrierlocalizationmechanismsininganganquantumwells AT humphreysc carrierlocalizationmechanismsininganganquantumwells |