Carrier localization mechanisms in InGaN/GaN quantum wells
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can locali...
| Päätekijät: | , , , , , , |
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| Aineistotyyppi: | Journal article |
| Julkaistu: |
American Physical Society
2011
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