Carrier localization mechanisms in InGaN/GaN quantum wells

Carrier localization mechanisms in InGaN/GaN quantum wells

Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can locali...

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Bibliographic Details
Main Authors:	Watson-Parris, D, Godfrey, M, Dawson, P, Oliver, R, Galtrey, M, Kappers, M, Humphreys, C
Format:	Journal article
Published:	American Physical Society 2011

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