Carrier localization mechanisms in InGaN/GaN quantum wells

Carrier localization mechanisms in InGaN/GaN quantum wells

Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can locali...

Full description

Bibliographic Details
Main Authors:	Watson-Parris, D, Godfrey, M, Dawson, P, Oliver, R, Galtrey, M, Kappers, M, Humphreys, C
Format:	Journal article
Published:	American Physical Society 2011

Similar Items

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
by: Hammersley, S, et al.
Published: (2012)

Growth modes in heteroepitaxy of InGaN on GaN
by: Oliver, R, et al.
Published: (2005)

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
by: Na, J, et al.
Published: (2006)

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
by: Na, J, et al.
Published: (2006)

Electrically driven single InGaN/GaN quantum dot emission
by: Jarjour, A, et al.
Published: (2008)

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
by: Oliver, R, et al.
Published: (2004)

Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
by: Park, Y, et al.
Published: (2011)

Microstructural origins of localization in InGaN quantum wells
by: Oliver, R, et al.
Published: (2010)

Two-photon absorption from single InGaN/GaN quantum dots
by: Jarjour, A, et al.
Published: (2006)

Optical studies of non-linear absorption in single InGaN/GaN quantum dots
by: Jarjour, A, et al.
Published: (2007)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
by: Jarjour, A, et al.
Published: (2007)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
by: Jarjour, A, et al.
Published: (2007)

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot.
by: Collins, D, et al.
Published: (2009)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
by: Oliver, R, et al.
Published: (2003)

Dynamics of localized carriers in InGaN multi-quantum wells
by: Kyhm, K, et al.
Published: (2006)

Cavity-enhanced blue single-photon emission from a single InGaN/GaN quantum dot
by: Jarjour, A, et al.
Published: (2007)

Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
by: Schulz, S, et al.
Published: (2015)

Luminescence properties of isolated InGaN/GaN quantum dots
by: Martin, R, et al.
Published: (2005)

Progress in the optical studies of single InGaN/GaN quantum dots
by: Jarjour, A, et al.
Published: (2007)

Three-dimensional atom probe studies of an InxGa1-xN/GaN multiple quantum well structure: Assessment of possible indium clustering
by: Galtrey, M, et al.
Published: (2007)

Three-dimensional atom probe analysis of green- and blue-emitting In(x)Ga(1-x)N/GaN multiple quantum well structures
by: Galtrey, M, et al.
Published: (2008)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates
by: Tang, F, et al.
Published: (2019)

Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.
by: Park, Y, et al.
Published: (2010)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
by: Ju, Zhen Gang, et al.
Published: (2016)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
by: Sun, Xiaowei, et al.
Published: (2013)

Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars
by: El-Ella, H, et al.
Published: (2012)

Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.
by: Park, Y, et al.
Published: (2012)

Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field
by: Jarjour, A, et al.
Published: (2008)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
by: Zhang, Zi-Hui, et al.
Published: (2013)

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
by: Zhang, Xueliang, et al.
Published: (2014)

Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures
by: Zhao, Zhibo, et al.
Published: (2021)

Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers
by: Teo, Y. C., et al.
Published: (2013)

Dynamics of single InGaN quantum dots
by: Taylor, R, et al.
Published: (2004)

Two-photon absorption in single site-controlled InGaN/GaN quantum dots
by: Jarjour, A, et al.
Published: (2005)

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
by: Chua, Soo-Jin, et al.
Published: (2003)

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
by: Song, T.L., et al.
Published: (2003)

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution
by: Holmes, M, et al.
Published: (2012)

Optical studies of GaN nanocolumns containing InGaN quantum disks and the effect of strain relaxation on the carrier distribution
by: Holmes, M, et al.
Published: (2012)

Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication
by: Lee, Mei Yee, et al.
Published: (2020)