OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON

Detalhes bibliográficos
Principais autores: Ray, I, Cockayne, D
Formato: Journal article
Publicado em: 1970
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author Ray, I
Cockayne, D
author_facet Ray, I
Cockayne, D
author_sort Ray, I
collection OXFORD
description
first_indexed 2024-03-06T19:04:49Z
format Journal article
id oxford-uuid:14c67cb1-76da-4b25-b14f-2e47bdd1c05f
institution University of Oxford
last_indexed 2024-03-06T19:04:49Z
publishDate 1970
record_format dspace
spelling oxford-uuid:14c67cb1-76da-4b25-b14f-2e47bdd1c05f2022-03-26T10:21:46ZOBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICONJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:14c67cb1-76da-4b25-b14f-2e47bdd1c05fSymplectic Elements at Oxford1970Ray, ICockayne, D
spellingShingle Ray, I
Cockayne, D
OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON
title OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON
title_full OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON
title_fullStr OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON
title_full_unstemmed OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON
title_short OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON
title_sort observation of dissociated dislocations in silicon
work_keys_str_mv AT rayi observationofdissociateddislocationsinsilicon
AT cockayned observationofdissociateddislocationsinsilicon