OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON

OBSERVATION OF DISSOCIATED DISLOCATIONS IN SILICON

Bibliografiske detaljer
Main Authors:	Ray, I, Cockayne, D
Format:	Journal article
Udgivet:	1970

Lignende værker

DISSOCIATION OF DISLOCATIONS IN SILICON
af: Ray, I, et al.
Udgivet: (1971)

DISSOCIATION OF NEAR-SCREW DISLOCATIONS IN GERMANIUM AND SILICON
af: Gomez, A, et al.
Udgivet: (1975)

GLIDING DISSOCIATED DISLOCATIONS IN CDS
af: Cockayne, D, et al.
Udgivet: (1980)

DISSOCIATION OF DISLOCATIONS IN DIAMOND
af: Pirouz, P, et al.
Udgivet: (1983)

Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures.
af: Zou, J, et al.
Udgivet: (1994)

GLIDING DISSOCIATED DISLOCATIONS IN HEXAGONAL CDS
af: Cockayne, D, et al.
Udgivet: (1980)

MISFIT DISLOCATION GENERATION FROM DISSOCIATED THREADING DISLOCATIONS IN STRAINED-LAYER HETEROSTRUCTURES
af: Zou, J, et al.
Udgivet: (1995)

WEAK-BEAM TECHNIQUE APPLIED TO SUPERLATTICE DISLOCATIONS IN IRON-ALUMINUM ALLOYS .2. FOURFOLD DISSOCIATION IN DO3-TYPE ORDER
af: Crawford, R, et al.
Udgivet: (1973)

THEORETICAL CONSIDERATION OF EQUILIBRIUM DISSOCIATION GEOMETRIES OF 60-DEGREES MISFIT DISLOCATIONS IN SINGLE SEMICONDUCTOR HETEROSTRUCTURES
af: Zou, J, et al.
Udgivet: (1995)

EQUILIBRIUM DISSOCIATION CONFIGURATION OF MISFIT DISLOCATIONS IN LOW STRAINED IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
af: Zou, J, et al.
Udgivet: (1993)

INVESTIGATION OF DISLOCATION GEOMETRIES IN DIAMOND CUBIC STRUCTURE
af: Ray, I, et al.
Udgivet: (1973)

Dissociation Behavior of Dislocations in Ice
af: Takeo Hondoh
Udgivet: (2019-07-01)

INVESTIGATIONS OF DISLOCATION STRAIN FIELDS USING WEAK BEAMS
af: Cockayne, D, et al.
Udgivet: (1969)

Cooperative dissociations of misfit dislocations at bimetal interfaces
af: K. Liu, et al.
Udgivet: (2016-11-01)

WEAK-BEAM TECHNIQUE APPLIED TO SUPERLATTICE DISLOCATIONS IN AN IRON-ALUMINIUM ALLOY
af: Ray, I, et al.
Udgivet: (1970)

PARTIAL SEPARATIONS OF EXTENDED ALPHA-DISLOCATIONS AND BETA-DISLOCATIONS IN II-VI SEMICONDUCTORS
af: Lu, G, et al.
Udgivet: (1986)

The dissociation of the [a plus c] dislocation in GaN
af: Hirsch, P, et al.
Udgivet: (2013)

The dissociated properties of dislocation in two-dimensional triangular lattice
af: Xiaozhi Wu, et al.
Udgivet: (2008-09-01)

THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES
af: Zou, J, et al.
Udgivet: (1993)

DISLOCATION-STRUCTURE AND MOTION IN CDS
af: Lu, G, et al.
Udgivet: (1986)

On the locking of dislocations by oxygen in silicon
af: Senkader, S, et al.
Udgivet: (2001)

DISLOCATION GEOMETRIES IN SEMICONDUCTORS AND IN SEMICONDUCTOR HETEROSTRUCTURES
af: Cockayne, D, et al.
Udgivet: (1991)

Dissociation of edge and screw pyramidal I and II dislocations in magnesium
af: Yang Yang, et al.
Udgivet: (2023-12-01)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
af: Wilshaw, P, et al.
Udgivet: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
af: Wilshaw, P, et al.
Udgivet: (1989)

INCIPIENT DISLOCATION DIPOLES IN SILICON
af: Heggie, M
Udgivet: (1989)

Impurity locking of dislocations in silicon
af: Giannattasio, A, et al.
Udgivet: (2004)

ELECTRICAL-ACTIVITY ASSOCIATED WITH DISLOCATIONS IN SILICON
af: Castaldini, A, et al.
Udgivet: (1989)

DISLOCATION-STRUCTURES AND MOTION IN II-VI SEMICONDUCTORS
af: Lu, G, et al.
Udgivet: (1983)

GLIDE OF MISFIT DISLOCATIONS THROUGH MULTILAYER HETEROSTRUCTURES
af: Zou, J, et al.
Udgivet: (1994)

The segregation behaviour of oxygen at dislocations in silicon
af: Senkader, S, et al.
Udgivet: (1999)

A dissociation mechanism for the [a plus c] dislocation in GaN
af: Nellist, P, et al.
Udgivet: (2014)

TEM studies of misfit dislocations in strained-layer heterostructures
af: Zou, J, et al.
Udgivet: (1994)

DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON-MICROSCOPY
af: Cockayne, D, et al.
Udgivet: (1979)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
af: Giannattasio, A, et al.
Udgivet: (2004)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
af: Fell, T, et al.
Udgivet: (1989)

INTERACTION OF IMPURITIES WITH DISLOCATION CORES IN SILICON
af: Heggie, M, et al.
Udgivet: (1989)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
af: Wilshaw, P, et al.
Udgivet: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
af: Fell, T, et al.
Udgivet: (1989)

Locking of dislocations by oxygen in Cz-silicon
af: Senkader, S, et al.
Udgivet: (1999)