Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2

Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2

Photoluminescence measurements in mono- and bilayer-MoS2 on SiO2 were undertaken to determine the thermal effect of the MoS2/SiO2 interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS2 were lower and weaker than those from bilayer MoS2 at low temperat...

詳細記述

書誌詳細
主要な著者: Park, Y, Chan, C, Taylor, R, Kim, Y, Kim, N, Jo, Y, Lee, S, Yang, W, Im, H, Lee, G
フォーマット: Journal article
言語:English
出版事項: Nature Publishing Group 2018
その他の書誌記述
要約:Photoluminescence measurements in mono- and bilayer-MoS2 on SiO2 were undertaken to determine the thermal effect of the MoS2/SiO2 interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS2 were lower and weaker than those from bilayer MoS2 at low temperatures, whilst the opposite was true at high temperatures above 200 K. Density functional theory calculations suggest that the observed optical bandgap crossover is caused by a weaker substrate coupling to the bilayer than to the monolayer.

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