Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2

Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2

Photoluminescence measurements in mono- and bilayer-MoS2 on SiO2 were undertaken to determine the thermal effect of the MoS2/SiO2 interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS2 were lower and weaker than those from bilayer MoS2 at low temperat...

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Príomhchruthaitheoirí:	Park, Y, Chan, C, Taylor, R, Kim, Y, Kim, N, Jo, Y, Lee, S, Yang, W, Im, H, Lee, G
Formáid:	Journal article
Teanga:	English
Foilsithe / Cruthaithe:	Nature Publishing Group 2018

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