Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2
Photoluminescence measurements in mono- and bilayer-MoS2 on SiO2 were undertaken to determine the thermal effect of the MoS2/SiO2 interface on the optical bandgap. The energy and intensity of the photoluminescence from monolayer MoS2 were lower and weaker than those from bilayer MoS2 at low temperat...
Những tác giả chính: | Park, Y, Chan, C, Taylor, R, Kim, Y, Kim, N, Jo, Y, Lee, S, Yang, W, Im, H, Lee, G |
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Định dạng: | Journal article |
Ngôn ngữ: | English |
Được phát hành: |
Nature Publishing Group
2018
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