Semi-insulating Czochralski-silicon for radio frequency applications
Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czoehralski silicon substrates up to 10 k Omega cm and on the average, this is nearly a ten-fold increase over the resistivity of the undoped starting wafer. Th...
| Main Authors: | , , , |
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| Format: | Conference item |
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2006
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| _version_ | 1826260439832461312 |
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| author | Mallik, K Groot, d Ashburn, P Wilshaw, P |
| author_facet | Mallik, K Groot, d Ashburn, P Wilshaw, P |
| author_sort | Mallik, K |
| collection | OXFORD |
| description | Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czoehralski silicon substrates up to 10 k Omega cm and on the average, this is nearly a ten-fold increase over the resistivity of the undoped starting wafer. The material is ideally suited for making semi-insulating silicon handle wafers for radio frequency silicon devices. Interesting features, like trapping by end-of range defects, out-diffusion and partial activation of Mn dopant atoms have been observed. |
| first_indexed | 2024-03-06T19:05:43Z |
| format | Conference item |
| id | oxford-uuid:150c339d-4a5c-485b-921f-981cbd55b3eb |
| institution | University of Oxford |
| last_indexed | 2024-03-06T19:05:43Z |
| publishDate | 2006 |
| record_format | dspace |
| spelling | oxford-uuid:150c339d-4a5c-485b-921f-981cbd55b3eb2022-03-26T10:23:16ZSemi-insulating Czochralski-silicon for radio frequency applicationsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:150c339d-4a5c-485b-921f-981cbd55b3ebSymplectic Elements at Oxford2006Mallik, KGroot, dAshburn, PWilshaw, PDeep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czoehralski silicon substrates up to 10 k Omega cm and on the average, this is nearly a ten-fold increase over the resistivity of the undoped starting wafer. The material is ideally suited for making semi-insulating silicon handle wafers for radio frequency silicon devices. Interesting features, like trapping by end-of range defects, out-diffusion and partial activation of Mn dopant atoms have been observed. |
| spellingShingle | Mallik, K Groot, d Ashburn, P Wilshaw, P Semi-insulating Czochralski-silicon for radio frequency applications |
| title | Semi-insulating Czochralski-silicon for radio frequency applications |
| title_full | Semi-insulating Czochralski-silicon for radio frequency applications |
| title_fullStr | Semi-insulating Czochralski-silicon for radio frequency applications |
| title_full_unstemmed | Semi-insulating Czochralski-silicon for radio frequency applications |
| title_short | Semi-insulating Czochralski-silicon for radio frequency applications |
| title_sort | semi insulating czochralski silicon for radio frequency applications |
| work_keys_str_mv | AT mallikk semiinsulatingczochralskisiliconforradiofrequencyapplications AT grootd semiinsulatingczochralskisiliconforradiofrequencyapplications AT ashburnp semiinsulatingczochralskisiliconforradiofrequencyapplications AT wilshawp semiinsulatingczochralskisiliconforradiofrequencyapplications |