Semi-insulating Czochralski-silicon for radio frequency applications
Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czoehralski silicon substrates up to 10 k Omega cm and on the average, this is nearly a ten-fold increase over the resistivity of the undoped starting wafer. Th...
| Main Authors: | , , , |
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| Format: | Conference item |
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2006
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