Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation

Stimulated emission and excitonic bleaching in GaN epilayers under high-density excitation

Measurements of edge emission on a GaN epilayer under N-2 laser excitation demonstrate stimulated emission and gain. The mechanisms involved are investigated by using laser pulses of 250 fs duration to measure simultaneously the photoluminescence and the time-resolved reflectance near the band edge,...

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Bibliographic Details
Main Authors: Taylor, R, Hess, S, Kyhm, K, Smith, J, Ryan, J, Yablonskii, G, Lutsenko, E, Pavlovskii, V, Heuken, M
Format: Conference item
Published: 1999
Description
Summary:Measurements of edge emission on a GaN epilayer under N-2 laser excitation demonstrate stimulated emission and gain. The mechanisms involved are investigated by using laser pulses of 250 fs duration to measure simultaneously the photoluminescence and the time-resolved reflectance near the band edge, over a range of excitation densities. The excitons are bleached at high densities due to free carriers. A broad luminescence band is seen, extending similar to 100 meV below the low-density emission peak. We show that the onset of the stimulated emission coincides with the bleaching of the excitons (the Mott transition).

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