Negative electro-conductance in Suspended 2D WS2 nanoscale devices.
We study the in-situ electro-conductance in nanoscale electronic devices composed of suspended monolayer 2D WS2 with metal electrodes inside an aberration-corrected transmission electron microscope. Monitoring the conductance changes when the device is exposed to the electron be...
| Những tác giả chính: | , , , , , , , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
American Chemical Society
2016
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| _version_ | 1826260564099203072 |
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| author | Fan, Y Robertson, A Zhang, X Tweedie, M Zhou, Y Rummeli, M Zheng, H Warner, J |
| author_facet | Fan, Y Robertson, A Zhang, X Tweedie, M Zhou, Y Rummeli, M Zheng, H Warner, J |
| author_sort | Fan, Y |
| collection | OXFORD |
| description | We study the in-situ electro-conductance in nanoscale electronic devices composed of suspended monolayer 2D WS2 with metal electrodes inside an aberration-corrected transmission electron microscope. Monitoring the conductance changes when the device is exposed to the electron beam with 80keV energy reveals a decrease in conductivity with increasing beam current density. The response time of the electro-conductance when exposed to the electron beam is substantially faster than the recovery time when the beam is turned off. We proposed a charge trap model that accounts for excitation of electrons into the conduction band and localized trap states from energy supplied by inelastic scattering of incident 80keV electrons. These results show how monolayer transition metal dichalcogenide 2D semiconductors can be used as transparent direct electron detectors in ultrathin nanoscale devices. |
| first_indexed | 2024-03-06T19:07:38Z |
| format | Journal article |
| id | oxford-uuid:15b36f87-56c6-4781-a8a0-a9a4592facd7 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:07:38Z |
| publishDate | 2016 |
| publisher | American Chemical Society |
| record_format | dspace |
| spelling | oxford-uuid:15b36f87-56c6-4781-a8a0-a9a4592facd72022-03-26T10:26:56ZNegative electro-conductance in Suspended 2D WS2 nanoscale devices.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:15b36f87-56c6-4781-a8a0-a9a4592facd7EnglishSymplectic Elements at OxfordAmerican Chemical Society2016Fan, YRobertson, AZhang, XTweedie, MZhou, YRummeli, MZheng, HWarner, JWe study the in-situ electro-conductance in nanoscale electronic devices composed of suspended monolayer 2D WS2 with metal electrodes inside an aberration-corrected transmission electron microscope. Monitoring the conductance changes when the device is exposed to the electron beam with 80keV energy reveals a decrease in conductivity with increasing beam current density. The response time of the electro-conductance when exposed to the electron beam is substantially faster than the recovery time when the beam is turned off. We proposed a charge trap model that accounts for excitation of electrons into the conduction band and localized trap states from energy supplied by inelastic scattering of incident 80keV electrons. These results show how monolayer transition metal dichalcogenide 2D semiconductors can be used as transparent direct electron detectors in ultrathin nanoscale devices. |
| spellingShingle | Fan, Y Robertson, A Zhang, X Tweedie, M Zhou, Y Rummeli, M Zheng, H Warner, J Negative electro-conductance in Suspended 2D WS2 nanoscale devices. |
| title | Negative electro-conductance in Suspended 2D WS2 nanoscale devices. |
| title_full | Negative electro-conductance in Suspended 2D WS2 nanoscale devices. |
| title_fullStr | Negative electro-conductance in Suspended 2D WS2 nanoscale devices. |
| title_full_unstemmed | Negative electro-conductance in Suspended 2D WS2 nanoscale devices. |
| title_short | Negative electro-conductance in Suspended 2D WS2 nanoscale devices. |
| title_sort | negative electro conductance in suspended 2d ws2 nanoscale devices |
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