One dimensional transport in silicon nanowire junction-less field effect transistors

Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regi...

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Bibliographic Details
Main Authors: Mirza, M, Schupp, F, Mol, J, MacLaren, D, Briggs, G, Paul, D
Format: Journal article
Language:English
Published: Nature Publishing Group 2017