Electronic phase transitions and magnetoresistance in a new bilayer manganate, Ca2.5Sr0.5GaMn2O8
The crystal structure of the anion-deficient perovskite Ca2.5Sr0.5GaMn2O8 has been studied at 290 and 5 K by neutron diffraction (290 K; space group Pcm21, a = 5.4294(1), b = 11.3722(3), c = 5.2983(1) Å). The vacant oxide sites order to create a structure in which perovskite bilayers consisting of M...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
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2002
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| _version_ | 1797055211287609344 |
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| author | Battle, P Blundell, S Santhosh, P Rosseinsky, M Steer, C |
| author_facet | Battle, P Blundell, S Santhosh, P Rosseinsky, M Steer, C |
| author_sort | Battle, P |
| collection | OXFORD |
| description | The crystal structure of the anion-deficient perovskite Ca2.5Sr0.5GaMn2O8 has been studied at 290 and 5 K by neutron diffraction (290 K; space group Pcm21, a = 5.4294(1), b = 11.3722(3), c = 5.2983(1) Å). The vacant oxide sites order to create a structure in which perovskite bilayers consisting of MnO6 octahedra are isolated from each other along [010] by a single layer of GaO4 tetrahedra. At 5 K the material is antiferromagnetic with an ordered magnetic moment of 3.09(1) μB per Mn cation. Magnetic susceptibility measurements suggest that short-range magnetic ordering within the bilayers occurs above 200 K, and muon spin relaxation data show that the transition to long-range magnetic order occurs between 150 and 125 K. The resistivity of Ca2.5Sr0.5GaMn2O8 decreases by an order of magnitude at 125 K, and ∼50% magnetoresistance is seen in a field of 80 kOe at 110 K. |
| first_indexed | 2024-03-06T19:07:51Z |
| format | Journal article |
| id | oxford-uuid:15c72e69-5d99-4300-9808-3579c2e8cec4 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:07:51Z |
| publishDate | 2002 |
| record_format | dspace |
| spelling | oxford-uuid:15c72e69-5d99-4300-9808-3579c2e8cec42022-03-26T10:27:21ZElectronic phase transitions and magnetoresistance in a new bilayer manganate, Ca2.5Sr0.5GaMn2O8Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:15c72e69-5d99-4300-9808-3579c2e8cec4EnglishSymplectic Elements at Oxford2002Battle, PBlundell, SSanthosh, PRosseinsky, MSteer, CThe crystal structure of the anion-deficient perovskite Ca2.5Sr0.5GaMn2O8 has been studied at 290 and 5 K by neutron diffraction (290 K; space group Pcm21, a = 5.4294(1), b = 11.3722(3), c = 5.2983(1) Å). The vacant oxide sites order to create a structure in which perovskite bilayers consisting of MnO6 octahedra are isolated from each other along [010] by a single layer of GaO4 tetrahedra. At 5 K the material is antiferromagnetic with an ordered magnetic moment of 3.09(1) μB per Mn cation. Magnetic susceptibility measurements suggest that short-range magnetic ordering within the bilayers occurs above 200 K, and muon spin relaxation data show that the transition to long-range magnetic order occurs between 150 and 125 K. The resistivity of Ca2.5Sr0.5GaMn2O8 decreases by an order of magnitude at 125 K, and ∼50% magnetoresistance is seen in a field of 80 kOe at 110 K. |
| spellingShingle | Battle, P Blundell, S Santhosh, P Rosseinsky, M Steer, C Electronic phase transitions and magnetoresistance in a new bilayer manganate, Ca2.5Sr0.5GaMn2O8 |
| title | Electronic phase transitions and magnetoresistance in a new bilayer manganate, Ca2.5Sr0.5GaMn2O8 |
| title_full | Electronic phase transitions and magnetoresistance in a new bilayer manganate, Ca2.5Sr0.5GaMn2O8 |
| title_fullStr | Electronic phase transitions and magnetoresistance in a new bilayer manganate, Ca2.5Sr0.5GaMn2O8 |
| title_full_unstemmed | Electronic phase transitions and magnetoresistance in a new bilayer manganate, Ca2.5Sr0.5GaMn2O8 |
| title_short | Electronic phase transitions and magnetoresistance in a new bilayer manganate, Ca2.5Sr0.5GaMn2O8 |
| title_sort | electronic phase transitions and magnetoresistance in a new bilayer manganate ca2 5sr0 5gamn2o8 |
| work_keys_str_mv | AT battlep electronicphasetransitionsandmagnetoresistanceinanewbilayermanganateca25sr05gamn2o8 AT blundells electronicphasetransitionsandmagnetoresistanceinanewbilayermanganateca25sr05gamn2o8 AT santhoshp electronicphasetransitionsandmagnetoresistanceinanewbilayermanganateca25sr05gamn2o8 AT rosseinskym electronicphasetransitionsandmagnetoresistanceinanewbilayermanganateca25sr05gamn2o8 AT steerc electronicphasetransitionsandmagnetoresistanceinanewbilayermanganateca25sr05gamn2o8 |