STRUCTURE INDUCED MAGNETIC-ANISOTROPY BEHAVIOR IN CO/GAAS(001) FILMS
Epitaxial Co has been grown on GaAs(001) and studied by both low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED), and by the magneto-optic Kerr effect (MOKE) and polarized neutron reflection (PNR). Three samples were fabricated using different growth proced...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Conference item |
| Published: |
1993
|
| _version_ | 1797055212667535360 |
|---|---|
| author | Blundell, S Gester, M Bland, J Daboo, C Gu, E Baird, M Ives, A |
| author_facet | Blundell, S Gester, M Bland, J Daboo, C Gu, E Baird, M Ives, A |
| author_sort | Blundell, S |
| collection | OXFORD |
| description | Epitaxial Co has been grown on GaAs(001) and studied by both low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED), and by the magneto-optic Kerr effect (MOKE) and polarized neutron reflection (PNR). Three samples were fabricated using different growth procedures: (1) "interrupted" growth (including an anneal); (2) and (3) continuous growth of similar thicknesses. For sample 1, RHEED patterns indicate an initial growth in the bcc phase followed by a relaxation into a distorted single phase at completion of growth, whereas samples 2 and 3 showed a multicrystalline structure after growth. LEED patterns were used to check the existence of the 2×4 reconstruction patterns before growth, but no LEED patterns could be obtained after more than 2 Å Co was deposited, in contrast to the RHEED patterns which remained visible throughout the growth. Structural analysis of the completed films indicates the formation of a ∼10 Å CoO layer on the Co/air interface, and gives thicknesses for magnetic material of (1) 30 Å and (2) 80 Å. Sample 1 showed a dominant fourfold magnetic anisotropy with the easy axis parallel to the (100) direction and with a strength 2K 4/M of ∼0.5 kOe, smaller in magnitude than that reported for bcc films on GaAs(110) but along the same axis [G. A. Prinz et al., J. Appl. Phys. 57, 3672 (1985)]. However, samples 2 and 3 showed only a large uniaxial anisotropy along the (110) direction of strength 2K 1/M of ∼1.5 kOe and ∼2.5 kOe, respectively, similar in magnitude to those previously observed [G. A. Prinz et al., J. Appl. Phys. 57, 3676 (1985)]. We attribute the origin of the contrasting magnetic anisotropy behavior observed to the differences in final structure. |
| first_indexed | 2024-03-06T19:07:52Z |
| format | Conference item |
| id | oxford-uuid:15c8ecdf-2827-4226-b942-220184a3bee5 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T19:07:52Z |
| publishDate | 1993 |
| record_format | dspace |
| spelling | oxford-uuid:15c8ecdf-2827-4226-b942-220184a3bee52022-03-26T10:27:22ZSTRUCTURE INDUCED MAGNETIC-ANISOTROPY BEHAVIOR IN CO/GAAS(001) FILMSConference itemhttp://purl.org/coar/resource_type/c_5794uuid:15c8ecdf-2827-4226-b942-220184a3bee5Symplectic Elements at Oxford1993Blundell, SGester, MBland, JDaboo, CGu, EBaird, MIves, AEpitaxial Co has been grown on GaAs(001) and studied by both low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED), and by the magneto-optic Kerr effect (MOKE) and polarized neutron reflection (PNR). Three samples were fabricated using different growth procedures: (1) "interrupted" growth (including an anneal); (2) and (3) continuous growth of similar thicknesses. For sample 1, RHEED patterns indicate an initial growth in the bcc phase followed by a relaxation into a distorted single phase at completion of growth, whereas samples 2 and 3 showed a multicrystalline structure after growth. LEED patterns were used to check the existence of the 2×4 reconstruction patterns before growth, but no LEED patterns could be obtained after more than 2 Å Co was deposited, in contrast to the RHEED patterns which remained visible throughout the growth. Structural analysis of the completed films indicates the formation of a ∼10 Å CoO layer on the Co/air interface, and gives thicknesses for magnetic material of (1) 30 Å and (2) 80 Å. Sample 1 showed a dominant fourfold magnetic anisotropy with the easy axis parallel to the (100) direction and with a strength 2K 4/M of ∼0.5 kOe, smaller in magnitude than that reported for bcc films on GaAs(110) but along the same axis [G. A. Prinz et al., J. Appl. Phys. 57, 3672 (1985)]. However, samples 2 and 3 showed only a large uniaxial anisotropy along the (110) direction of strength 2K 1/M of ∼1.5 kOe and ∼2.5 kOe, respectively, similar in magnitude to those previously observed [G. A. Prinz et al., J. Appl. Phys. 57, 3676 (1985)]. We attribute the origin of the contrasting magnetic anisotropy behavior observed to the differences in final structure. |
| spellingShingle | Blundell, S Gester, M Bland, J Daboo, C Gu, E Baird, M Ives, A STRUCTURE INDUCED MAGNETIC-ANISOTROPY BEHAVIOR IN CO/GAAS(001) FILMS |
| title | STRUCTURE INDUCED MAGNETIC-ANISOTROPY BEHAVIOR IN CO/GAAS(001) FILMS |
| title_full | STRUCTURE INDUCED MAGNETIC-ANISOTROPY BEHAVIOR IN CO/GAAS(001) FILMS |
| title_fullStr | STRUCTURE INDUCED MAGNETIC-ANISOTROPY BEHAVIOR IN CO/GAAS(001) FILMS |
| title_full_unstemmed | STRUCTURE INDUCED MAGNETIC-ANISOTROPY BEHAVIOR IN CO/GAAS(001) FILMS |
| title_short | STRUCTURE INDUCED MAGNETIC-ANISOTROPY BEHAVIOR IN CO/GAAS(001) FILMS |
| title_sort | structure induced magnetic anisotropy behavior in co gaas 001 films |
| work_keys_str_mv | AT blundells structureinducedmagneticanisotropybehaviorincogaas001films AT gesterm structureinducedmagneticanisotropybehaviorincogaas001films AT blandj structureinducedmagneticanisotropybehaviorincogaas001films AT dabooc structureinducedmagneticanisotropybehaviorincogaas001films AT gue structureinducedmagneticanisotropybehaviorincogaas001films AT bairdm structureinducedmagneticanisotropybehaviorincogaas001films AT ivesa structureinducedmagneticanisotropybehaviorincogaas001films |