Scalable techniques for producing field-effect passivation in high-efficiency silicon solar cells
This paper presents techniques to tailor and optimize the field-effect passivation of silicon surfaces using the deposition and field-assisted migration of potassium ions. While field-effect passivation of this nature has previously been demonstrated using laboratory scale techniques, in this paper,...
| Main Authors: | , , , , , , , |
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| Format: | Journal article |
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Institute of Electrical and Electronics Engineers
2018
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| _version_ | 1797055331320201216 |
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| author | Collett, K Du, S Bourret-Sicotte, G Luo, Z Hamer, P Hallam, B Bonilla Osorio, R Wilshaw, P |
| author_facet | Collett, K Du, S Bourret-Sicotte, G Luo, Z Hamer, P Hallam, B Bonilla Osorio, R Wilshaw, P |
| author_sort | Collett, K |
| collection | OXFORD |
| description | This paper presents techniques to tailor and optimize the field-effect passivation of silicon surfaces using the deposition and field-assisted migration of potassium ions. While field-effect passivation of this nature has previously been demonstrated using laboratory scale techniques, in this paper, it is shown how it can be realized using fast and scalable ion deposition and migration methods. Together, the deposition and migration processes are seen to produce excellent improvements to the surface passivation of oxidized 1-Ω·cm n-type float-zone silicon. Effective lifetimes as high as 2.1 ms are observed, in the best case yielding a surface recombination velocity as low as 3.3 cm/s with a corresponding surface dark saturation current density of 8.4 fA/cm2. |
| first_indexed | 2024-03-06T19:09:11Z |
| format | Journal article |
| id | oxford-uuid:16300ffd-a97e-4dab-b3d5-6a38dcd93624 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T19:09:11Z |
| publishDate | 2018 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | oxford-uuid:16300ffd-a97e-4dab-b3d5-6a38dcd936242022-03-26T10:29:49ZScalable techniques for producing field-effect passivation in high-efficiency silicon solar cellsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:16300ffd-a97e-4dab-b3d5-6a38dcd93624Symplectic Elements at OxfordInstitute of Electrical and Electronics Engineers2018Collett, KDu, SBourret-Sicotte, GLuo, ZHamer, PHallam, BBonilla Osorio, RWilshaw, PThis paper presents techniques to tailor and optimize the field-effect passivation of silicon surfaces using the deposition and field-assisted migration of potassium ions. While field-effect passivation of this nature has previously been demonstrated using laboratory scale techniques, in this paper, it is shown how it can be realized using fast and scalable ion deposition and migration methods. Together, the deposition and migration processes are seen to produce excellent improvements to the surface passivation of oxidized 1-Ω·cm n-type float-zone silicon. Effective lifetimes as high as 2.1 ms are observed, in the best case yielding a surface recombination velocity as low as 3.3 cm/s with a corresponding surface dark saturation current density of 8.4 fA/cm2. |
| spellingShingle | Collett, K Du, S Bourret-Sicotte, G Luo, Z Hamer, P Hallam, B Bonilla Osorio, R Wilshaw, P Scalable techniques for producing field-effect passivation in high-efficiency silicon solar cells |
| title | Scalable techniques for producing field-effect passivation in high-efficiency silicon solar cells |
| title_full | Scalable techniques for producing field-effect passivation in high-efficiency silicon solar cells |
| title_fullStr | Scalable techniques for producing field-effect passivation in high-efficiency silicon solar cells |
| title_full_unstemmed | Scalable techniques for producing field-effect passivation in high-efficiency silicon solar cells |
| title_short | Scalable techniques for producing field-effect passivation in high-efficiency silicon solar cells |
| title_sort | scalable techniques for producing field effect passivation in high efficiency silicon solar cells |
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