OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE
We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the effici...
| প্রধান লেখক: | , , , |
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| বিন্যাস: | Journal article |
| ভাষা: | English |
| প্রকাশিত: |
1987
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| সংক্ষিপ্ত: | We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the efficiency of trapping of carriers into the well increases rapidly in the same temperature range. A mean trapping time of 4 ps is measured for a 50 Å well. |
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