OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE
We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the effici...
| Main Authors: | , , , |
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| Format: | Journal article |
| Jezik: | English |
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1987
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| _version_ | 1826260731618656256 |
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| author | Westland, D Mihailovic, D Ryan, J Scott, M |
| author_facet | Westland, D Mihailovic, D Ryan, J Scott, M |
| author_sort | Westland, D |
| collection | OXFORD |
| description | We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the efficiency of trapping of carriers into the well increases rapidly in the same temperature range. A mean trapping time of 4 ps is measured for a 50 Å well. |
| first_indexed | 2024-03-06T19:10:21Z |
| format | Journal article |
| id | oxford-uuid:16919b8e-a55a-44b9-9730-7a5fcea5f78c |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:10:21Z |
| publishDate | 1987 |
| record_format | dspace |
| spelling | oxford-uuid:16919b8e-a55a-44b9-9730-7a5fcea5f78c2022-03-26T10:31:58ZOPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTUREJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:16919b8e-a55a-44b9-9730-7a5fcea5f78cEnglishSymplectic Elements at Oxford1987Westland, DMihailovic, DRyan, JScott, MWe have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the efficiency of trapping of carriers into the well increases rapidly in the same temperature range. A mean trapping time of 4 ps is measured for a 50 Å well. |
| spellingShingle | Westland, D Mihailovic, D Ryan, J Scott, M OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE |
| title | OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE |
| title_full | OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE |
| title_fullStr | OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE |
| title_full_unstemmed | OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE |
| title_short | OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE |
| title_sort | optical time of flight measurement of carrier diffusion and trapping in an ingaas inp heterostructure |
| work_keys_str_mv | AT westlandd opticaltimeofflightmeasurementofcarrierdiffusionandtrappinginaningaasinpheterostructure AT mihailovicd opticaltimeofflightmeasurementofcarrierdiffusionandtrappinginaningaasinpheterostructure AT ryanj opticaltimeofflightmeasurementofcarrierdiffusionandtrappinginaningaasinpheterostructure AT scottm opticaltimeofflightmeasurementofcarrierdiffusionandtrappinginaningaasinpheterostructure |