OPTICAL TIME-OF-FLIGHT MEASUREMENT OF CARRIER DIFFUSION AND TRAPPING IN AN INGAAS/INP HETEROSTRUCTURE
We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the effici...
Päätekijät: | Westland, D, Mihailovic, D, Ryan, J, Scott, M |
---|---|
Aineistotyyppi: | Journal article |
Kieli: | English |
Julkaistu: |
1987
|
Samankaltaisia teoksia
-
TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENT OF CARRIER TRAPPING TIME OF INGAAS/INP QUANTUM WELLS
Tekijä: Westland, D, et al.
Julkaistu: (1988) -
The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures
Tekijä: Xiaohong Zhao, et al.
Julkaistu: (2019-08-01) -
Surface roughness anisotopy on mismatched InAlAs/InGaAs/InP heterostructures
Tekijä: Sinn, Matthew T. (Matthew Thomas)
Julkaistu: (2005) -
HOT CARRIER ENERGY-LOSS RATES IN GAINAS/INP QUANTUM WELLS
Tekijä: Westland, D, et al.
Julkaistu: (1988) -
The electrical and optical characterization of the InGaAs/InP alloy system
Tekijä: Towe, Elias D
Julkaistu: (2005)