(110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment
The formation of InAs self-assembled quantum dots on (110) GaAs substrates is demonstrated. These dots form with significantly lower densities than InAs dots grown on (100) GaAs. The low density growth mode of these InAs nanostructures allows for the fabrication of devices capable of electroluminesc...
| Principais autores: | , , , , , |
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| Formato: | Journal article |
| Idioma: | English |
| Publicado em: |
2005
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| _version_ | 1826260897354481664 |
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| author | Wasserman, D Shaner, E Lyon, SA Hadjipanayi, M Maciel, A Ryan, J |
| author_facet | Wasserman, D Shaner, E Lyon, SA Hadjipanayi, M Maciel, A Ryan, J |
| author_sort | Wasserman, D |
| collection | OXFORD |
| description | The formation of InAs self-assembled quantum dots on (110) GaAs substrates is demonstrated. These dots form with significantly lower densities than InAs dots grown on (100) GaAs. The low density growth mode of these InAs nanostructures allows for the fabrication of devices capable of electroluminescence from individual quantum dots. Such a device has been fabricated with conventional photolithography and its emission spectra characterized. Additionally, because GaAs cleaves naturally along the (110) crystal plane, the ability to grow InAs quantum dots on (110) GaAs substrates allows for the growth of these dots on the cleaved edges of GaAs first growth samples containing InGaAs strain layers of varying thickness and In fraction. 100% linear alignment of InAs quantum dots over these InGaAs strain layers is demonstrated. © 2005 Materials Research Society. |
| first_indexed | 2024-03-06T19:13:01Z |
| format | Journal article |
| id | oxford-uuid:1768ae78-2088-465b-94ac-6fc04c45019f |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:13:01Z |
| publishDate | 2005 |
| record_format | dspace |
| spelling | oxford-uuid:1768ae78-2088-465b-94ac-6fc04c45019f2022-03-26T10:37:02Z(110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignmentJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:1768ae78-2088-465b-94ac-6fc04c45019fEnglishSymplectic Elements at Oxford2005Wasserman, DShaner, ELyon, SAHadjipanayi, MMaciel, ARyan, JThe formation of InAs self-assembled quantum dots on (110) GaAs substrates is demonstrated. These dots form with significantly lower densities than InAs dots grown on (100) GaAs. The low density growth mode of these InAs nanostructures allows for the fabrication of devices capable of electroluminescence from individual quantum dots. Such a device has been fabricated with conventional photolithography and its emission spectra characterized. Additionally, because GaAs cleaves naturally along the (110) crystal plane, the ability to grow InAs quantum dots on (110) GaAs substrates allows for the growth of these dots on the cleaved edges of GaAs first growth samples containing InGaAs strain layers of varying thickness and In fraction. 100% linear alignment of InAs quantum dots over these InGaAs strain layers is demonstrated. © 2005 Materials Research Society. |
| spellingShingle | Wasserman, D Shaner, E Lyon, SA Hadjipanayi, M Maciel, A Ryan, J (110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment |
| title | (110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment |
| title_full | (110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment |
| title_fullStr | (110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment |
| title_full_unstemmed | (110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment |
| title_short | (110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment |
| title_sort | 110 inas quantum dots growth single dot luminescence and cleaved edge alignment |
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