(110) InAs quantum dots: Growth, single-dot luminescence and cleaved edge alignment
The formation of InAs self-assembled quantum dots on (110) GaAs substrates is demonstrated. These dots form with significantly lower densities than InAs dots grown on (100) GaAs. The low density growth mode of these InAs nanostructures allows for the fabrication of devices capable of electroluminesc...
| Prif Awduron: | , , , , , |
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| Fformat: | Journal article |
| Iaith: | English |
| Cyhoeddwyd: |
2005
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