Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher...

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Bibliografische gegevens
Hoofdauteurs: Mishra, A, Titova, L, Hoang, T, Jackson, H, Smith, L, Yarrison-Rice, J, Kim, Y, Joyce, H, Gao, Q, Tan, H, Jagadish, C
Formaat: Journal article
Taal:English
Gepubliceerd in: 2007
Omschrijving
Samenvatting:We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher in energy than the ZB nanowires. The temperature dependence of the PL is similar but not identical for the WZ and ZB nanowires. We find that ZB nanowires exhibit strong polarization parallel to the nanowire axis, while the WZ nanowires exhibit polarized emission perpendicular to the nanowire axis. This behavior is interpreted in terms of the different selection rules for WZ and ZB crystal structures. © 2007 American Institute of Physics.

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