Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher...

Bibliografiset tiedot
Päätekijät:	Mishra, A, Titova, L, Hoang, T, Jackson, H, Smith, L, Yarrison-Rice, J, Kim, Y, Joyce, H, Gao, Q, Tan, H, Jagadish, C
Aineistotyyppi:	Journal article
Kieli:	English
Julkaistu:	2007

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