High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics
We report on optical studies of non-polar InGaN quantum dots grown on the (11$ \bar 2 $2) plane. Excitonic and biexcitonic complexes are identified by their power dependence and show similar binding energies (∼ 36 meV) and recombination dynamics to conventional polar (0001) InGaN quantum dots. Measu...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
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2014
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| _version_ | 1826261356221825024 |
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| author | Reid, B Zhu, T Chan, C Kocher, C Oehler, F Emery, R Kappers, M Oliver, R Taylor, R |
| author_facet | Reid, B Zhu, T Chan, C Kocher, C Oehler, F Emery, R Kappers, M Oliver, R Taylor, R |
| author_sort | Reid, B |
| collection | OXFORD |
| description | We report on optical studies of non-polar InGaN quantum dots grown on the (11$ \bar 2 $2) plane. Excitonic and biexcitonic complexes are identified by their power dependence and show similar binding energies (∼ 36 meV) and recombination dynamics to conventional polar (0001) InGaN quantum dots. Measured lifetimes as low as 300 ps suggest a reduced internal electric field when compared with polar InGaN quantum dots. Temperature dependent micro-photoluminescence measurements on a single exciton with a lifetime of 327ps reveal no significant exciton linewidth broadening up to 120K, suggesting a reduction in phonon coupling strength when compared to polar quantum dots. This is supported by a measured lifetime of 313 ps for this exciton at 77 K, suggesting the measured exciton decay is almost purely radiative. © 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. |
| first_indexed | 2024-03-06T19:20:06Z |
| format | Journal article |
| id | oxford-uuid:19c89c10-e317-4a24-9839-1445ca11d7ba |
| institution | University of Oxford |
| last_indexed | 2024-03-06T19:20:06Z |
| publishDate | 2014 |
| record_format | dspace |
| spelling | oxford-uuid:19c89c10-e317-4a24-9839-1445ca11d7ba2022-03-26T10:51:04ZHigh temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamicsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:19c89c10-e317-4a24-9839-1445ca11d7baSymplectic Elements at Oxford2014Reid, BZhu, TChan, CKocher, COehler, FEmery, RKappers, MOliver, RTaylor, RWe report on optical studies of non-polar InGaN quantum dots grown on the (11$ \bar 2 $2) plane. Excitonic and biexcitonic complexes are identified by their power dependence and show similar binding energies (∼ 36 meV) and recombination dynamics to conventional polar (0001) InGaN quantum dots. Measured lifetimes as low as 300 ps suggest a reduced internal electric field when compared with polar InGaN quantum dots. Temperature dependent micro-photoluminescence measurements on a single exciton with a lifetime of 327ps reveal no significant exciton linewidth broadening up to 120K, suggesting a reduction in phonon coupling strength when compared to polar quantum dots. This is supported by a measured lifetime of 313 ps for this exciton at 77 K, suggesting the measured exciton decay is almost purely radiative. © 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim. |
| spellingShingle | Reid, B Zhu, T Chan, C Kocher, C Oehler, F Emery, R Kappers, M Oliver, R Taylor, R High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics |
| title | High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics |
| title_full | High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics |
| title_fullStr | High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics |
| title_full_unstemmed | High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics |
| title_short | High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics |
| title_sort | high temperature stability in non polar 11 20 ingan quantum dots exciton and biexciton dynamics |
| work_keys_str_mv | AT reidb hightemperaturestabilityinnonpolar1120inganquantumdotsexcitonandbiexcitondynamics AT zhut hightemperaturestabilityinnonpolar1120inganquantumdotsexcitonandbiexcitondynamics AT chanc hightemperaturestabilityinnonpolar1120inganquantumdotsexcitonandbiexcitondynamics AT kocherc hightemperaturestabilityinnonpolar1120inganquantumdotsexcitonandbiexcitondynamics AT oehlerf hightemperaturestabilityinnonpolar1120inganquantumdotsexcitonandbiexcitondynamics AT emeryr hightemperaturestabilityinnonpolar1120inganquantumdotsexcitonandbiexcitondynamics AT kappersm hightemperaturestabilityinnonpolar1120inganquantumdotsexcitonandbiexcitondynamics AT oliverr hightemperaturestabilityinnonpolar1120inganquantumdotsexcitonandbiexcitondynamics AT taylorr hightemperaturestabilityinnonpolar1120inganquantumdotsexcitonandbiexcitondynamics |