DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE

DEVICES AND DESIRES IN THE 2-4 MU-M REGION BASED ON ANTIMONY-CONTAINING III-V HETEROSTRUCTURES GROWN BY MOVPE

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Aardvark, A, Allogho, G, Bougnot, G, David, J, Giani, A, Haywood, S, Hill, G, Klipstein, P, Mansoor, F, Mason, N, Nicholas, R, Pascaldelannoy, F, Pate, M, Ponnampalam, L, Walker, P
التنسيق:	Conference item
منشور في:	1993

مواد مشابهة

GASB HETEROSTRUCTURES GROWN BY MOVPE
حسب: Chidley, E, وآخرون
منشور في: (1988)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
حسب: Haywood, S, وآخرون
منشور في: (1991)

GROWTH OF GASB BY MOVPE
حسب: Haywood, S, وآخرون
منشور في: (1988)

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
حسب: Maxim A. Ladugin, وآخرون
منشور في: (2019-06-01)

PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
حسب: Warburton, R, وآخرون
منشور في: (1991)

Growth and application of group III - Antimonides by MOVPE
حسب: Klipstein, P, وآخرون
منشور في: (1996)

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment
حسب: Allwood, D, وآخرون
منشور في: (2000)

ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB/IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE
حسب: Krier, A, وآخرون
منشور في: (1994)

ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
حسب: Lakrimi, M, وآخرون
منشور في: (1991)

MOVPE grown self-assembled Sb-based quantum dots assessed by means of AFM and TEM
حسب: Mock, P, وآخرون
منشور في: (2000)

InP nanowires grown by SA-MOVPE
حسب: Gao, Q, وآخرون
منشور في: (2012)

GASB INAS HETEROJUNCTIONS GROWN BY MOVPE - EFFECT OF GAS SWITCHING SEQUENCES ON INTERFACE QUALITY
حسب: Lakrimi, M, وآخرون
منشور في: (1991)

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
حسب: Booker, G, وآخرون
منشور في: (1997)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
حسب: Roslan, Sharizar, وآخرون
منشور في: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
حسب: Zulkafli Othaman, author, وآخرون
منشور في: (2007)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
حسب: V. Orejuela, وآخرون
منشور في: (2024-09-01)

MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
حسب: Mock, P, وآخرون
منشور في: (2001)

TED, TEM and AFM studies comparing atomic ordering in InAsySb1-y layers grown by MOVPE and MBE
حسب: Seong, T, وآخرون
منشور في: (1997)

Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
حسب: Norman, A, وآخرون
منشور في: (1997)

OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
حسب: Lakrimi, M, وآخرون
منشور في: (1992)

InGaN quantum dots grown by MOVPE via a droplet epitaxy route
حسب: Rice, J, وآخرون
منشور في: (2004)

An atomic ordering based AlInP unicompositional quantum well grown by MOVPE
حسب: Tang, Xiaohong, وآخرون
منشور في: (2013)

MOVPE-Grown Quantum Cascade Laser Structures Studied by Kelvin Probe Force Microscopy
حسب: Konstantin Ladutenko, وآخرون
منشور في: (2020-02-01)

Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE
حسب: Beata Ściana, وآخرون
منشور في: (2022-04-01)

N-polar AlN buffer growth by MOVPE for transistor applications
حسب: Lemettinen, Jori, وآخرون
منشور في: (2019)

MOVPE InP based material for millimetsubmillimeter wave generation and amplificationer and
حسب: Włodzimierz Strupiński, وآخرون
منشور في: (2002-03-01)

MOVPE Technology of Fe-Compensated In PLayers for the Quantum Cascade Laser Applications
حسب: Mikołaj Badura
منشور في: (2020-06-01)

Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell
حسب: Wojciech Dawidowski, وآخرون
منشور في: (2021-07-01)

Influence of substrate dopant type on the optical properties of GaInAs/InP multiquantum well structures grown by low pressure MOVPE
حسب: Wood, A, وآخرون
منشور في: (1997)

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates
حسب: Soresi Stefano, وآخرون
منشور في: (2023-01-01)

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
حسب: Lemettinen, Jori, وآخرون
منشور في: (2019)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
حسب: Kazimieras Badokas, وآخرون
منشور في: (2022-02-01)

CYCLOTRON-RESONANCE IN INAS/GASB HETEROSTRUCTURES
حسب: Sundaram, G, وآخرون
منشور في: (1992)

The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates
حسب: Piotr Kruszewski, وآخرون
منشور في: (2024-09-01)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
حسب: Oliver, R, وآخرون
منشور في: (2003)

Sulfidation of Zinc oxide by interaction with Antimony sulfide
حسب: V.F. Zinchenko, وآخرون
منشور في: (2024-06-01)

GROWTH OF GAINAS/INP MULTI-QUANTUM-WELL PIN PHOTODIODE STRUCTURES BY ATMOSPHERIC-PRESSURE MOVPE
حسب: Scott, M, وآخرون
منشور في: (1987)

Revisiting the Mechanistic Pathway of Gas-Phase Reactions in InN MOVPE Through DFT Calculations
حسب: Xiaokun He, وآخرون
منشور في: (2025-02-01)

GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
حسب: Chidley, E, وآخرون
منشور في: (1989)

Search for D+(s) to pi+ mu+ mu- and D+(s) to pi- mu+ mu+ decays
حسب: collaboration, L, وآخرون
منشور في: (2013)